JPH0480532B2 - - Google Patents

Info

Publication number
JPH0480532B2
JPH0480532B2 JP57183015A JP18301582A JPH0480532B2 JP H0480532 B2 JPH0480532 B2 JP H0480532B2 JP 57183015 A JP57183015 A JP 57183015A JP 18301582 A JP18301582 A JP 18301582A JP H0480532 B2 JPH0480532 B2 JP H0480532B2
Authority
JP
Japan
Prior art keywords
layer
region
insulating layer
substrate
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57183015A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58118113A (ja
Inventor
Aametsudo Abasu Sheekaa
Emesu Magudo Inguritsudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS58118113A publication Critical patent/JPS58118113A/ja
Publication of JPH0480532B2 publication Critical patent/JPH0480532B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76832—Multiple layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP57183015A 1981-12-30 1982-10-20 半導体装置の製造方法 Granted JPS58118113A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/335,894 US4424621A (en) 1981-12-30 1981-12-30 Method to fabricate stud structure for self-aligned metallization
US335894 1981-12-30

Publications (2)

Publication Number Publication Date
JPS58118113A JPS58118113A (ja) 1983-07-14
JPH0480532B2 true JPH0480532B2 (en]) 1992-12-18

Family

ID=23313666

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57183015A Granted JPS58118113A (ja) 1981-12-30 1982-10-20 半導体装置の製造方法

Country Status (4)

Country Link
US (1) US4424621A (en])
EP (1) EP0083089B1 (en])
JP (1) JPS58118113A (en])
DE (1) DE3278597D1 (en])

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4661832A (en) * 1982-06-30 1987-04-28 International Business Machines Corporation Total dielectric isolation for integrated circuits
US4551906A (en) * 1983-12-12 1985-11-12 International Business Machines Corporation Method for making self-aligned lateral bipolar transistors
US4546535A (en) * 1983-12-12 1985-10-15 International Business Machines Corporation Method of making submicron FET structure
US4636834A (en) * 1983-12-12 1987-01-13 International Business Machines Corporation Submicron FET structure and method of making
US4584761A (en) * 1984-05-15 1986-04-29 Digital Equipment Corporation Integrated circuit chip processing techniques and integrated chip produced thereby
NL8402223A (nl) * 1984-07-13 1986-02-03 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting en inrichting, vervaardigd door toepassing daarvan.
JPS61202454A (ja) * 1985-03-05 1986-09-08 Mitsubishi Electric Corp アルミニウム配線の被切断回路の構造と切断方法
US4887144A (en) * 1985-07-26 1989-12-12 Texas Instruments Incorporated Topside substrate contact in a trenched semiconductor structure and method of fabrication
US4723197A (en) * 1985-12-16 1988-02-02 National Semiconductor Corporation Bonding pad interconnection structure
US4895810A (en) * 1986-03-21 1990-01-23 Advanced Power Technology, Inc. Iopographic pattern delineated power mosfet with profile tailored recessed source
US5256583A (en) * 1986-03-21 1993-10-26 Advanced Power Technology, Inc. Mask surrogate semiconductor process with polysilicon gate protection
US4760036A (en) * 1987-06-15 1988-07-26 Delco Electronics Corporation Process for growing silicon-on-insulator wafers using lateral epitaxial growth with seed window oxidation
US4776922A (en) * 1987-10-30 1988-10-11 International Business Machines Corporation Formation of variable-width sidewall structures
US5055427A (en) * 1987-12-02 1991-10-08 Advanced Micro Devices, Inc. Process of forming self-aligned interconnects for semiconductor devices
JPH02186636A (ja) * 1989-01-12 1990-07-20 Seiko Epson Corp 集積回路装置の配線法
US5013398A (en) * 1990-05-29 1991-05-07 Micron Technology, Inc. Anisotropic etch method for a sandwich structure
GB2245418A (en) * 1990-06-20 1992-01-02 Koninkl Philips Electronics Nv A semiconductor device and a method of manufacturing such a device
US5137837A (en) * 1990-08-20 1992-08-11 Hughes Aircraft Company Radiation-hard, high-voltage semiconductive device structure fabricated on SOI substrate
KR930006128B1 (ko) * 1991-01-31 1993-07-07 삼성전자 주식회사 반도체장치의 금속 배선 형성방법
US5229325A (en) * 1991-01-31 1993-07-20 Samsung Electronics Co., Ltd. Method for forming metal wirings of semiconductor device
US5252501A (en) * 1991-12-30 1993-10-12 Texas Instruments Incorporated Self-aligned single-mask CMOS/BiCMOS twin-well formation with flat surface topography
US6139483A (en) * 1993-07-27 2000-10-31 Texas Instruments Incorporated Method of forming lateral resonant tunneling devices
US5380671A (en) * 1994-06-13 1995-01-10 United Microelectronics Corporation Method of making non-trenched buried contact for VLSI devices
US5606202A (en) * 1995-04-25 1997-02-25 International Business Machines, Corporation Planarized gate conductor on substrates with above-surface isolation
US5711851A (en) 1996-07-12 1998-01-27 Micron Technology, Inc. Process for improving the performance of a temperature-sensitive etch process
WO2000039858A2 (en) 1998-12-28 2000-07-06 Fairchild Semiconductor Corporation Metal gate double diffusion mosfet with improved switching speed and reduced gate tunnel leakage
EP1137059A1 (de) 2000-03-24 2001-09-26 Infineon Technologies AG Halbleiterbauelement, Verfahren zu seiner Herstellung und Verfahren zur Herstellung von elektrischen Verbindungen zwischen einzelnen Schaltungselementen
US7078296B2 (en) 2002-01-16 2006-07-18 Fairchild Semiconductor Corporation Self-aligned trench MOSFETs and methods for making the same
US7361973B2 (en) * 2004-05-21 2008-04-22 International Business Machines Corporation Embedded stressed nitride liners for CMOS performance improvement
US20060110842A1 (en) * 2004-11-23 2006-05-25 Yuh-Hwa Chang Method and apparatus for preventing metal/silicon spiking in MEMS devices
CN107978517B (zh) * 2016-10-21 2020-07-07 中芯国际集成电路制造(上海)有限公司 半导体器件及其制作方法、电子装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1527894A (en) * 1975-10-15 1978-10-11 Mullard Ltd Methods of manufacturing electronic devices
JPS5275275A (en) * 1975-12-19 1977-06-24 Matsushita Electric Ind Co Ltd Production of mos type semiconductor device
US4062699A (en) 1976-02-20 1977-12-13 Western Digital Corporation Method for fabricating diffusion self-aligned short channel MOS device
US4234362A (en) 1978-11-03 1980-11-18 International Business Machines Corporation Method for forming an insulator between layers of conductive material
US4209350A (en) 1978-11-03 1980-06-24 International Business Machines Corporation Method for forming diffusions having narrow dimensions utilizing reactive ion etching
US4209349A (en) 1978-11-03 1980-06-24 International Business Machines Corporation Method for forming a narrow dimensioned mask opening on a silicon body utilizing reactive ion etching
US4256514A (en) 1978-11-03 1981-03-17 International Business Machines Corporation Method for forming a narrow dimensioned region on a body
US4201603A (en) 1978-12-04 1980-05-06 Rca Corporation Method of fabricating improved short channel MOS devices utilizing selective etching and counterdoping of polycrystalline silicon
US4211582A (en) 1979-06-28 1980-07-08 International Business Machines Corporation Process for making large area isolation trenches utilizing a two-step selective etching technique
US4322883A (en) 1980-07-08 1982-04-06 International Business Machines Corporation Self-aligned metal process for integrated injection logic integrated circuits
US4359816A (en) 1980-07-08 1982-11-23 International Business Machines Corporation Self-aligned metal process for field effect transistor integrated circuits

Also Published As

Publication number Publication date
EP0083089A3 (en) 1985-01-23
DE3278597D1 (en) 1988-07-07
EP0083089B1 (en) 1988-06-01
EP0083089A2 (en) 1983-07-06
JPS58118113A (ja) 1983-07-14
US4424621A (en) 1984-01-10

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